Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large band gap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller band gap materials required for absorption at 1.3/1.55 μm. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures, and compatibility with mainstream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire...
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p...
Photodetectors are semiconductor devices that can convert optical signals into electrical signals. T...
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. Wi...
Avalanche photodetectors (APDs) are key components in optical communication systems due to their inc...
The availability of new manufacturing methodology in solid state physics makes it possible to grow n...
Nanoscience is an emerging field of technology where the bottom-up fabrication techniques are utiliz...
Semiconductor nanowires, with their quasi one-dimension geometry, inherently provide strain relaxati...
Here we report on the experimental results and advanced self-consistent real device simulations reve...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Photodetectors are semiconductor devices capable of converting optical signals into electrical signa...
I ntegrating nanophotonics with electronics could enhance and/or enable opportunities in areas rangi...
We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon...
High-performance photodetectors operating in the near-infrared (0.75–1.4 μm) and short-wave infrared...
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p...
Photodetectors are semiconductor devices that can convert optical signals into electrical signals. T...
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. Wi...
Avalanche photodetectors (APDs) are key components in optical communication systems due to their inc...
The availability of new manufacturing methodology in solid state physics makes it possible to grow n...
Nanoscience is an emerging field of technology where the bottom-up fabrication techniques are utiliz...
Semiconductor nanowires, with their quasi one-dimension geometry, inherently provide strain relaxati...
Here we report on the experimental results and advanced self-consistent real device simulations reve...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Photodetectors are semiconductor devices capable of converting optical signals into electrical signa...
I ntegrating nanophotonics with electronics could enhance and/or enable opportunities in areas rangi...
We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon...
High-performance photodetectors operating in the near-infrared (0.75–1.4 μm) and short-wave infrared...
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p...
Photodetectors are semiconductor devices that can convert optical signals into electrical signals. T...
We report InP nanowire photodetectors with a single InAsP quantum dot as light absorbing element. Wi...