Using the improved expression of the defect pool model proposed by Powell and Deane we match the experimental current–voltage and the spectral response characteristic curves of hydrogenated amorphous silicon solar cells. We compare the electrical parameters resulting from using the different defect pool models published in the literature and from assuming a uniform density of dangling bond in every device layer. We discuss the applicability of the algorithm derived by Schumm for the stabilized state exploring its sensitivity to the sample history. Finally we propose an expression for stabilized cells adapting Schumm's ideas to the expression derived by Powell and Deane.Fil: Klimovsky, E.. Universidad Tecnologica Nacional; ArgentinaFil: Stur...
AbstractHydrogenated amorphous Si (aSi:H) solar cells are strongly affected by the well known Staeb...
Due increasing energy use per capita and increasing world population, the world faces an energy-cris...
A self-consistent numerical model for hydrogenated amorphous silicon(a-Si:H) has been developed to a...
Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the ...
In the scientific literature the density of states of hydrogenated amorphous silicon has been assume...
The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they con...
This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) ni...
An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules i...
Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with devic...
We present a combination of experimental and computer modelling studies of the light induced degrada...
International audienceThis paper proposes to address how a-Si:H(p) bulk defects impact the macroscop...
Dark forward bias current, JD-V, characteristics offer a probe for characterizing carrier recombinat...
We present results of computer simulations of the light induced degradation of amorphous silicon sol...
The performance of a-Si:H devices is highly sensitive to the density of gap states: tail states are ...
Hydrogenated amorphous Si (aSi:H) solar cells are strongly affected by the well known Staebler–Wron...
AbstractHydrogenated amorphous Si (aSi:H) solar cells are strongly affected by the well known Staeb...
Due increasing energy use per capita and increasing world population, the world faces an energy-cris...
A self-consistent numerical model for hydrogenated amorphous silicon(a-Si:H) has been developed to a...
Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the ...
In the scientific literature the density of states of hydrogenated amorphous silicon has been assume...
The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they con...
This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) ni...
An improved equivalent circuit for hydrogenated amorphous silicon (a-Si:H) solar cells and modules i...
Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with devic...
We present a combination of experimental and computer modelling studies of the light induced degrada...
International audienceThis paper proposes to address how a-Si:H(p) bulk defects impact the macroscop...
Dark forward bias current, JD-V, characteristics offer a probe for characterizing carrier recombinat...
We present results of computer simulations of the light induced degradation of amorphous silicon sol...
The performance of a-Si:H devices is highly sensitive to the density of gap states: tail states are ...
Hydrogenated amorphous Si (aSi:H) solar cells are strongly affected by the well known Staebler–Wron...
AbstractHydrogenated amorphous Si (aSi:H) solar cells are strongly affected by the well known Staeb...
Due increasing energy use per capita and increasing world population, the world faces an energy-cris...
A self-consistent numerical model for hydrogenated amorphous silicon(a-Si:H) has been developed to a...