Polycrystalline silicon thin films on glass obtained by nickel-induced crystallization of amorphous silicon
- Schmidt, Javier Alejandro
- Budini, Nicolas
- Arce, Roberto Delio
- Buitrago, Roman Horacio
DOIAbstract
In this work, we use the nickel-induced crystallization process to crystallize a-Si:H thin films at temperatures compatible with the utilization of glass substrates. Hydrogenated amorphous silicon films are deposited on planar float glass (Schott AF37) by plasma-enhanced chemical vapour deposition. The films, between 400 and 1400 nm thick, are grown intrinsic, slightly p-doped (p-) or with a combined structure of heavily p-doped / slightly p-doped (p+/p-) layers. On these films we sputter nickel with concentrations between 2.5×1014 and 3×1015 at./cm2 and then we anneal the samples in a standard nitrogenpurged tube furnace. The process evolves through the formation of the nickel silicide NiSi2, which has a lattice constant very s...
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