We study a memristive circuit with included parasitic elements, such as capacitance and inductance. In the multiple-scale scheme, we analytically show how the parasitic elements afect the voltage and the current. Finally, we provide an analytical expression for the intersection point coordinates, through which we discuss the functional behavior of the pinched hysteresis loop versus the operating frequency and the parasitic elements
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
In 2008, researchers at the Hewlett–Packard (HP) laboratories published a paper in Nature reporting ...
A new method for analyzing the impact of materials and architectures of Power Mechatronic assemblies...
We study a memristive circuit with included parasitic elements, such as capacitance and inductance. ...
The main purpose of this paper is to investigate the influence of the mutual inductance between the ...
The hysteresis loops pinched in the v-i origin belong to well-known fingerprints of memristive eleme...
Memristors are the predicted fourth fundamental passive element of circuits, connecting a previously...
In this research, we study the effects of the parasitic fractional elements to the dynamic of the me...
This article investigates the frequency-related fingerprints of the meminductor/capacitors and their...
Memristor-based circuits are widely exploited to realize analog and/or digital systems for a broad s...
The characterization of parasitic couplings contributing to mechatronic assemblies’ wide band Electr...
The classical fingerprint of the ideal memristor with differentiable constitutive relation has recen...
In this study, a graphical modelling approach of the pinched hysteresis loops exhibited by memristor...
In this paper, we revisit the memristor concept within circuit theory. We start from the definition ...
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
In 2008, researchers at the Hewlett–Packard (HP) laboratories published a paper in Nature reporting ...
A new method for analyzing the impact of materials and architectures of Power Mechatronic assemblies...
We study a memristive circuit with included parasitic elements, such as capacitance and inductance. ...
The main purpose of this paper is to investigate the influence of the mutual inductance between the ...
The hysteresis loops pinched in the v-i origin belong to well-known fingerprints of memristive eleme...
Memristors are the predicted fourth fundamental passive element of circuits, connecting a previously...
In this research, we study the effects of the parasitic fractional elements to the dynamic of the me...
This article investigates the frequency-related fingerprints of the meminductor/capacitors and their...
Memristor-based circuits are widely exploited to realize analog and/or digital systems for a broad s...
The characterization of parasitic couplings contributing to mechatronic assemblies’ wide band Electr...
The classical fingerprint of the ideal memristor with differentiable constitutive relation has recen...
In this study, a graphical modelling approach of the pinched hysteresis loops exhibited by memristor...
In this paper, we revisit the memristor concept within circuit theory. We start from the definition ...
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
In non-linear measurements, the applied stimulus itself affects the electrical properties of the und...
In 2008, researchers at the Hewlett–Packard (HP) laboratories published a paper in Nature reporting ...
A new method for analyzing the impact of materials and architectures of Power Mechatronic assemblies...