On the growth mechanism of a-Si:H
- Kessels, W.M.M.
- Smets, A.H.M.
- Marra, D.C.
- Aydil, E.S.
- Schram, D.C.
- Sanden, van de, M.C.M.
DOIAbstract
The kinetic growth model for hydrogenated amorphous silicon (a-Si:H) from SiH/sub 3/ radicals in SiH/sub 4/ plasmas is reviewed on the basis of recently obtained experimental and computational data. New surface reactions are considered and their implications for the a-Si:H film growth mechanism are discussed. Furthermore, from the experimentally observed substrate temperature-dependence of the bulk hydrogen content and the composition of the a-Si:H surface hydrides, it is concluded that surface processes play an important role in hydrogen elimination from the film during growt
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