Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Ulloa Herrero, J.M.
Drouzas, I.W.D.
Koenraad, P.M.
Mowbray, D.J.
Steer, M.J.
Liu, H.Y.
Hopkinson, M.

Publication date

January 2007

DOI

Abstract

The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs/GaAs quantum dots (QDs) is studied on the at. scale by cross-sectional scanning tunneling microscopy. QDs capped with GaAs0.75Sb0.25 exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decompn. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer. [on SciFinder (R)

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Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Abstract

Extracted data

Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Abstract

Extracted data

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