In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD with an O2 plasma, can be used to deposit Al2O3 for a high level of surface passivation of crystalline silicon (c-Si). For 3.5 Ocm n-type c-Si, plasma ALD Al2O3 resulted in ultralow surface recombination velocities of Seff <0.8 cm/s. Thermal ALD Al2O3 also showed an excellent passivation level, with Seff <2.5 cm/s. In contrast to plasma ALD Al2O3, thermal ALD Al2O3 provides some surface passivation in the as-deposited state, although annealing is required to activate it to the full extent. For thermal ALD, the optimal temperature for this anneal was found to be slightly lower, 375 °C, than for plasma ALD Al2O3, 425 °C. The minimal Al2O3 thickn...
Thin Al2O3 films with a thickness of 7-30 nm synthesized by plasma-assisted at. layer deposition (AL...
Thin Al2O3 films with a thickness of 7-30 nm synthesized by plasma-assisted at. layer deposition (AL...
A next generation material for surface passivation of crystalline Si is Al2O3. It has been shown tha...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Thin Al2O3 films with a thickness of 7-30 nm synthesized by plasma-assisted at. layer deposition (AL...
Thin Al2O3 films with a thickness of 7-30 nm synthesized by plasma-assisted at. layer deposition (AL...
A next generation material for surface passivation of crystalline Si is Al2O3. It has been shown tha...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
In this Letter, we report that both thermal atomic layer deposition (ALD) with H2O, and plasma ALD w...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cel...
Thin Al2O3 films with a thickness of 7-30 nm synthesized by plasma-assisted at. layer deposition (AL...
Thin Al2O3 films with a thickness of 7-30 nm synthesized by plasma-assisted at. layer deposition (AL...
A next generation material for surface passivation of crystalline Si is Al2O3. It has been shown tha...