Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces
- Agarwal, S.
- Sriraman, S.
- Takano, A.
- Sanden, van de, M.C.M.
- Aydil, E.S.
- Maroudas, D.
DOIAbstract
Hydrogen atoms are abstracted from the surface of hydrogenated amorphous silicon (a-Si:H) films by impinging H(D) atoms through an Eley–Rideal mechanism that is characterized by a zero activation energy barrier. This has been revealed by systematic analysis of the interactions of H(D) atoms with a-Si:H films during exposure to an H2(D2) plasma using synergistically molecular-dynamics simulations and attenuated total reflection Fourier transform infrared spectroscopy combined with spectroscopic ellipsometry. Understanding such interactions is of utmost importance in optimizing the plasma deposition of silicon thin films
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