It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc approximately=3*1020 cm-3) can be found above which ferromagnetic behaviour is displayed. This behaviour can be explained with a two-band RKKY model. Preliminary experiments on the nature of the low-temperature phase are presented
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
In this paper experimental evidence is presented for the carrier concentration dependence of the mag...
In this paper experimental evidence is presented for the carrier concentration dependence of the mag...
In this paper experimental evidence is presented for the carrier concentration dependence of the mag...
The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferrom...
The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferrom...
The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferrom...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
It is shown that for the diluted magnetic semiconductors Sn1-xMnxTe a critical carrier density (pc a...
In this paper experimental evidence is presented for the carrier concentration dependence of the mag...
In this paper experimental evidence is presented for the carrier concentration dependence of the mag...
In this paper experimental evidence is presented for the carrier concentration dependence of the mag...
The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferrom...
The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferrom...
The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferrom...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...
New measurements of the magnetic carrier-induced properties of Sn1-xMnxTe for x≤0.10 are presented. ...