Lasing of wavelength-tunable (1.55µm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy
- Anantathanasarn, S.
- Nötzel, R.
- Veldhoven, van, P.J.
- Otten, van, F.W.M.
- Barbarin, Y.
- Servanton, G.
- Vries, de, T.
- Smalbrugge, E.
- Geluk, E.J.
- Eijkemans, T.J.
- Bente, E.A.J.M.
- Oei, Y.S.
- Smit, M.K.
- Wolter, J.H.
Publication date
January 2006
DOIAbstract
The authors report lasing of InAs/InGaAsP/InP (100) quantum dots (QDs) wavelength tuned into the 1.55 µm telecom region. Wavelength control of the InAs QDs in an InGaAsP/InP waveguide is based on the suppression of As/P exchange through ultrathin GaAs interlayers. The narrow ridge-waveguide QD lasers operate in continuous wave mode at room temperature on the QD ground state transition. The low threshold current density of 580 A/cm2 and low transparency current density of 6 A/cm2 per QD layer, measured in pulsed mode, are accompanied by low loss and high gain with an 80-nm-wide gain spectrum
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