The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated with a quadrupole mass spectrometer. We have determined the kinetical parameters for a unimolecular reaction of the first order, i.e. the activation energy and frequency factor, from the decomposition efficiency as a function of temperature. These results are compared with data from literature. We find the lowest activation energies ever reported for the hydride pyrolysis, namely 72 and 48 kJ/mol for phosphine and arsine, respectively. This is due to the heterogeneous decomposition on catalytic molybdenum baffles inside the cracker cell. Additionally, we have studied the impurity incorporation in epitaxially grown bulk InP layers in relation t...
Thermal cracking characteristic of phenol as the model compound of biomass tar was investigated on a...
International audienceThe work deals with the removal by slow pyrolysis of epoxy resin from samples ...
Gas source molecular beam epitaxy is an advanced crystal growth technique that has been shown to be ...
The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated w...
The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated w...
The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated w...
The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated w...
Journal ArticleThe most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine ...
Journal ArticleWe report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE)...
[[abstract]]In an attempt to maximize the cracking and dimerization efficiencies with the use of Ta ...
Remote plasma metalorganic chemical vapor deposition (RP-MOCVD) technique, though relatively new, is...
[[abstract]]The electrical characteristics of InP grown by molecular beam epitaxy (MBE) using a valv...
GaxIn(1-x)As/InP epitaxy is studied in vapor phase by hydride method. Two sets of experiments have b...
GaxIn(1-x)As/InP epitaxy is studied in vapor phase by hydride method. Two sets of experiments have b...
The reaction mechanism involved in the growth of InxGa1-xAs lattice matched to InP by chemical beam ...
Thermal cracking characteristic of phenol as the model compound of biomass tar was investigated on a...
International audienceThe work deals with the removal by slow pyrolysis of epoxy resin from samples ...
Gas source molecular beam epitaxy is an advanced crystal growth technique that has been shown to be ...
The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated w...
The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated w...
The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated w...
The decomposition of phosphine and arsine in a chemical beam epitaxy cracker cell was investigated w...
Journal ArticleThe most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine ...
Journal ArticleWe report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE)...
[[abstract]]In an attempt to maximize the cracking and dimerization efficiencies with the use of Ta ...
Remote plasma metalorganic chemical vapor deposition (RP-MOCVD) technique, though relatively new, is...
[[abstract]]The electrical characteristics of InP grown by molecular beam epitaxy (MBE) using a valv...
GaxIn(1-x)As/InP epitaxy is studied in vapor phase by hydride method. Two sets of experiments have b...
GaxIn(1-x)As/InP epitaxy is studied in vapor phase by hydride method. Two sets of experiments have b...
The reaction mechanism involved in the growth of InxGa1-xAs lattice matched to InP by chemical beam ...
Thermal cracking characteristic of phenol as the model compound of biomass tar was investigated on a...
International audienceThe work deals with the removal by slow pyrolysis of epoxy resin from samples ...
Gas source molecular beam epitaxy is an advanced crystal growth technique that has been shown to be ...