We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires via a gold catalyst particle. We demonstrate this by synthesizing axial pn-junctions, chemically etching them, and fabricating electrical contacts in a vertical configuration. Electrical measurements show clear diode behavior. Control of dopant incorporation is crucial for future applications and will eventually lead to full freedom of design
We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from...
Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vap...
We demonstrate high yield vapor–liquid–solid (VLS) growth of 100-oriented InP nanowire arrays. The h...
We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires v...
We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires v...
We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires v...
We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires v...
We report the incorporation of zinc atoms into vapor−liquid−solid grown indium phosphide nanowires v...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quali...
We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quali...
We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from...
Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vap...
We demonstrate high yield vapor–liquid–solid (VLS) growth of 100-oriented InP nanowire arrays. The h...
We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires v...
We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires v...
We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires v...
We report the incorporation of zinc atoms into vapor-liquid-solid grown indium phosphide nanowires v...
We report the incorporation of zinc atoms into vapor−liquid−solid grown indium phosphide nanowires v...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which a...
We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quali...
We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quali...
We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from...
Vertical indium phosphide nanowires have been grown epitaxially on silicon (111) by metalorganic vap...
We demonstrate high yield vapor–liquid–solid (VLS) growth of 100-oriented InP nanowire arrays. The h...