67 GHz uni-traveling carrier photodetector on an InP-membrane-on-silicon platform

Shen, L.
Jiao, Y.
Yao, W.
Cao, Z.
van der Tol, J.J.G.M.
Roelkens, G.C.
Smit, M.K.

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Publication date

January 2016

DOI

10.1364/cleo_si.2016.sth1g.5

Publisher

Optical Society of America (OSA)

Abstract

An InP membrane-based uni-traveiling carrier photodetector, heterogeneously integrated on silicon, is realized using double-sided processing. A responsivity of 0.7 A/W at 1.55 μm and a 3 dB bandwidth beyond 67 GHz are demonstrated

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67 GHz uni-traveling carrier photodetector on an InP-membrane-on-silicon platform

Abstract

Extracted data

67 GHz uni-traveling carrier photodetector on an InP-membrane-on-silicon platform

Abstract

Extracted data

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