Magnetic tunnel junction device having an intermediate layer

A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an intermediate layer provided between the barrier layer and one of the electrode layers and including a conductive material having a work function with a value which is at least 25% lower than the value of the work function of the material of the respective electrode layer