Three terminal double barrier resonant tunneling devices based on the direct contacting of the quantum well

Three terminal (31) Double Barrier Resonant Tunneling (DBR1) devices with the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The plane of the very thin quantum well is reached using high selective etching processes and a nonalloyed Ti/Pt/Au metallization scheme is used to obtain a Schottky base contact. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the device DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigation of the DBRT structures and suggest important applications in high-speed electronics