We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray diffraction reciprocal space mapping and reflectivity. An anisotropy in the dot spacing was found, which proves an ordering of the islands in a disordered two-dimensional square lattice with main axes parallel to the direction and a lateral lattice parameter of 55 nm. Vertical correlations in the dot multilayers were investigated nondestructively in the regime of total external reflection of X-rays
We have studied the structural properties of single and multiple layers of self-organised Ge islands...
We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are i...
Self-organized Ge-dots on (OOI)-oriented Si-substrates have been studied using twodimensionally reso...
We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray ...
We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray ...
We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction ...
We have investigated, by means of X-ray diffraction reciprocal space mapping and X-ray reflectivity,...
We have investigated, by means of X-ray diffraction reciprocal space mapping and X-ray reflectivity,...
The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayer...
The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayer...
Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated ...
Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated ...
We have studied the structural properties of single and multiple layers of self-organised Ge islands...
We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are i...
Self-organized Ge-dots on (OOI)-oriented Si-substrates have been studied using twodimensionally reso...
We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray ...
We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray ...
We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction ...
We have investigated, by means of X-ray diffraction reciprocal space mapping and X-ray reflectivity,...
We have investigated, by means of X-ray diffraction reciprocal space mapping and X-ray reflectivity,...
The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayer...
The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayer...
Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated ...
Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated ...
We have studied the structural properties of single and multiple layers of self-organised Ge islands...
We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are i...
Self-organized Ge-dots on (OOI)-oriented Si-substrates have been studied using twodimensionally reso...