InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm
- Revin, D.G.
- Wilson, L.R.
- Zibik, E.A.
- Green, R.P.
- Cockburn, J.W.
- Steer, M.J.
- Airey, R.J.
- Hopkinson, M.
- Offermans, P.
- Koenraad, P.M.
- Wolter, J.H.
Publication date
January 2009
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this syste
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