We demonstrate the control of polarization and dipole moment in semiconductor nanostructures, through nanoscale engineering of shape and composition. Rodlike nanostructures, elongated along the growth direction, are obtained by molecular beam epitaxial growth. By varying the aspect ratio and compositional contrast between the rod and the surrounding matrix, we rotate the polarization of the dominant interband transition from transverse-electric to transverse-magnetic, and modify the dipole moment producing a radical change in the voltage dependence of absorption spectra. This opens the way to the optimization of quantum dot amplifiers and electro-optical modulators. © 2009 American Institute of Physics
First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are s...
Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers...
We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semicond...
We demonstrate the control of polarization and dipole moment in semiconductor nanostructures, throug...
In the last three or so decades, optical scientists have begun to capitalize in earnest on the advan...
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where...
International audienceWe demonstrate here electrical control of the sign of the circularly polarized...
Field-dependent photo-current measurements in Quantum Rod systems show that the orientation of the p...
We present eight-band k.p calculations of the electronic and polarization properties of columnar In\...
Binary polar semiconductors in the wurtzite structure can be grown in the form of nanorods aligned a...
A microscopic analysis of a vertical stack of self-assembled InAs/GaAs lens-shaped quantum dot nano...
The single particle spectrum of a charged particle in a nanometric ellipsoidal quantum dot is calcul...
We report the linear polarization features of the vertical photoluminescence from InAs/GaAs self-ass...
We report on the optical properties of single quantum dots in nanowires probed along orthogonal dire...
Cavity enhanced interactions of light and matter have promising applications in quantum information ...
First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are s...
Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers...
We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semicond...
We demonstrate the control of polarization and dipole moment in semiconductor nanostructures, throug...
In the last three or so decades, optical scientists have begun to capitalize in earnest on the advan...
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where...
International audienceWe demonstrate here electrical control of the sign of the circularly polarized...
Field-dependent photo-current measurements in Quantum Rod systems show that the orientation of the p...
We present eight-band k.p calculations of the electronic and polarization properties of columnar In\...
Binary polar semiconductors in the wurtzite structure can be grown in the form of nanorods aligned a...
A microscopic analysis of a vertical stack of self-assembled InAs/GaAs lens-shaped quantum dot nano...
The single particle spectrum of a charged particle in a nanometric ellipsoidal quantum dot is calcul...
We report the linear polarization features of the vertical photoluminescence from InAs/GaAs self-ass...
We report on the optical properties of single quantum dots in nanowires probed along orthogonal dire...
Cavity enhanced interactions of light and matter have promising applications in quantum information ...
First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are s...
Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers...
We demonstrate the feasibility and flexibility of artificial shape engineering of epitaxial semicond...