This study presents an experimental method to determine the resist parameters that are at the origin of a general blurring of the projected aerial image. The resist model includes the effects of diffusion in the horizontal plane and a second cause for image blur that originates from a stochastic variation of the focus parameter. The used mathematical framework is the so-called Extended Nijboer-Zernike (ENZ) theory. The experimental procedure to extract the model parameters is demonstrated for several 193 nm resists under various conditions of post exposure baking temperature and baking time. The advantage of our approach is a clear separation between the optical parameters, such as feature size, projection lens aberrations and the illuminat...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
Simulations for predicting resist effects in the sub 50 nm resolution regime are strongly requested ...
Lithography modeling is a very attractive way to predict the critical dimensions of patterned featur...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters at the origin of a gen...
This study presents an experimental method to determine the resist parameters at the origin of a gen...
This study presents an experimental method to determine the resist parameters at the origin of a gen...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
Simulations for predicting resist effects in the sub 50 nm resolution regime are strongly requested ...
Lithography modeling is a very attractive way to predict the critical dimensions of patterned featur...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters that are at the origin...
This study presents an experimental method to determine the resist parameters at the origin of a gen...
This study presents an experimental method to determine the resist parameters at the origin of a gen...
This study presents an experimental method to determine the resist parameters at the origin of a gen...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
In this paper we give the proof of principle of a new experimental method to determine the aberratio...
Simulations for predicting resist effects in the sub 50 nm resolution regime are strongly requested ...
Lithography modeling is a very attractive way to predict the critical dimensions of patterned featur...