Monolithic InP-based passively modelocked semiconductor ring lasers at 1.5 µm

In this paper an overview is given of the results we have obtained at the COBRA Research Institute in our work on passively modelocked semiconductor lasers operating in the 1.5 µm wavelength region. Most results concern modelocked ring lasers that are realized monolithically in the InP/InGaAsP materials system as well as simulations using lumped element and traveling wave type models. The experimental results show that the ring lasers appear as the more stable type of lasers. The modeling results show the importance of using a symmetrical configuration in the ring laser for stable operation. Most recent results on linear modelocked quantum dot lasers at 1.5 µm indicate the improvements possible using these material