This paper addresses the effects of a short high-temperature step, corresponding to the firing of the metallization on Si solar cells, on the structural and optical properties of high-rate (> 0.5 nm/s) plasma deposited a-SiNx:H films. Three different types of a-SiNx:H films were prepared using (i) a N2-SiH4 expanding thermal plasma, (ii) a NH3-SiH4 expanding thermal plasma, and (iii) a NH3-SiH4 microwave plasma. The changes in structural and optical properties of the films have been investigated before and after the high temperature step by means of elastic recoil detection, spectroscopic ellipsometry, and Fourier transform infrared spectroscopy. The high temperature step induces significant changes in hydrogen content, mass density, and op...
Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s...
High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) f...
High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) film...
This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...
The influence of a short high-temperature step, comparable to the so-called firing of the metalliz...
\u3cp\u3eThis paper addresses the effects of a short high-temperature step, corresponding to the fir...
The influence of a short high-temperature step, comparable to the so-called "firing" of the metalliz...
The feasibility of the new 'Expanding Thermal Plasma' technique for the deposition of a-SiNx:H at hi...
We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...
Driven by the need for improvement of the economical competitiveness of photovoltaic energy, the fea...
We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...
Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s...
High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) f...
High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) film...
This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...
The influence of a short high-temperature step, comparable to the so-called firing of the metalliz...
\u3cp\u3eThis paper addresses the effects of a short high-temperature step, corresponding to the fir...
The influence of a short high-temperature step, comparable to the so-called "firing" of the metalliz...
The feasibility of the new 'Expanding Thermal Plasma' technique for the deposition of a-SiNx:H at hi...
We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...
Driven by the need for improvement of the economical competitiveness of photovoltaic energy, the fea...
We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...
Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s...
High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) f...
High-rate (> 1 nm/s) and low-temperature (50 - 400 °C) deposition of silicon nitride (a-SiNx:H) film...