Method for passivating a semiconductor substrate surface

A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one SiOx layer is realized on said part of the substrate surface by: - placing the substrate in a process chamber; - maintaining the pressure in the process chamber at a relatively low value; - maintaining the substrate at a specific substrate treatment temp.; - generating a plasma by at least one plasma source mounted on the process chamber at a specific distance from the substrate surface; - contacting at least a part of the plasma generated by each source with the said part of the substrate surface; and - supplying at least one precursor suitable for SiOx realization to the said part of the plasma; wherein at least the at least one layer realized on the substrate in subjected to a temp. treatment in a gas environment