Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements
This thesis describes an extensive study of the optical and structural properties of GaAs/AlGaAs V-g...
Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed ...
We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs ...
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs mul...
We review our recent results on GaAs sidewall quantum wires, quantum dots and coupled wire–dot array...
[[abstract]]Quantum wire heterostructures have been grown in situ using gas source molecular beam ep...
Using a novel growth mechanism on patterned high-index GaAs (311)A substrates we have developed a ne...
The role of annealing for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (100) during...
Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular b...
In der vorgelegten Arbeit wurden zwei Arten von Quantendrahtstrukturen untersucht, die mittels Molek...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
[[abstract]]A GaxIn1−xP/Ga0.51In0.49P multiple‐quantum‐wire heterostructure was formed in situ throu...
Different types of InGaAs/GaAs deep-etched quantum wire (QWI) structure were successfully fabricated...
Chemical beam epitaxy was used to grow GaAs and InP based heterostructures on selectively masked sub...
This thesis describes an extensive study of the optical and structural properties of GaAs/AlGaAs V-g...
Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed ...
We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs ...
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs mul...
We review our recent results on GaAs sidewall quantum wires, quantum dots and coupled wire–dot array...
[[abstract]]Quantum wire heterostructures have been grown in situ using gas source molecular beam ep...
Using a novel growth mechanism on patterned high-index GaAs (311)A substrates we have developed a ne...
The role of annealing for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (100) during...
Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular b...
In der vorgelegten Arbeit wurden zwei Arten von Quantendrahtstrukturen untersucht, die mittels Molek...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
[[abstract]]A GaxIn1−xP/Ga0.51In0.49P multiple‐quantum‐wire heterostructure was formed in situ throu...
Different types of InGaAs/GaAs deep-etched quantum wire (QWI) structure were successfully fabricated...
Chemical beam epitaxy was used to grow GaAs and InP based heterostructures on selectively masked sub...
This thesis describes an extensive study of the optical and structural properties of GaAs/AlGaAs V-g...
Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed ...
We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs ...