Review of low-frequency noise in bipolars over the last decades
- Vandamme, L.K.J.
- Trefan, G.
- Zampardi, P.
- Shott, J.
- Burghartz, J.
Publication date
January 2001
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Experimental studies on low frequency noise in bipolar junction transistors (BJT) including polysilicon emitter, hetero-junction transistors (HBTs) and SiGe HBTs are reviewed. The validity of a new empirical relation between the 1/f noise corner frequency f/sub c/ (the frequency where the 1/f noise and shot noise are equal) and the cutoff frequency f/sub T/ is investigated. The coherence-method to investigate the most dominant low-frequency noise source in the equivalent circuit is described
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