Surface roughness in XeF2 etching of a-Si/c-Si(100)

Single wavelength ellipsometry and at. force microscopy (AFM) were applied in a well-calibrated beam-etching expt. to characterize the dynamics of surface roughening induced by chem. etching of a .apprx.12 nm amorphous Si (a-Si) top layer and the underlying cryst. Si (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF2 flux, we observe a similar evolution of the surface roughness as a function of the XeF2 dose proportional to D(XeF2)b with b~0.2. In the transition region from the pure amorphous to the pure cryst. silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF2)b with b~1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphol. temporarily changes to a structure that suggests a cusp-like shape. The remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6 s, with s the root-mean-square variation of the AFM's distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of s which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphol. is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the exptl. etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7 ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness. [on SciFinder (R)