AC-conductivity measurements were performed on aluminium oxynitrides (Alons) because of their interesting defect structure. Although it became apparent that these Alons are not stable in the temperature range used, the electrical properties of the materials could be measured with impedance spectroscopy using a special procedure. The activation energy for charge transport in Alons with 67.5, 73 and 77.5 mol% Al2O3 at temperatures between 1173 and 1373 K was 2.78, 2.85 and 2.97 eV, respectively, while the pre-exponential factors increased with increasing number of aluminium vacancies. The conductivity shows a more-than-linear dependency on the amount of aluminium vacancies. Charge is transported via aluminium vacancies but the large amount of...
The electrical conductivity of reduced ~-Nh~O ~ was measured after prior reduction in 10- " arm...
A discussion of electrical properties of amorphous thin films of Al−In2O3−Al structure is presented....
Tris(8-hydroxyquinoline) aluminium (Alq3) inserted in the structure ITO/Alq3/Al is used to show how...
AC-conductivity measurements were performed on aluminium oxynitrides (Alons) because of their intere...
Electrical conductivities of aluminum nitride (AlN) doped with various ions of different sizes and v...
The total electrical conductivity of oxygen-doped and beryllium-doped aluminum nitride has been meas...
The electrical conductivity of hot-pressed polycrystalline aluminium nitride doped with oxygen and b...
Electrical conductivity and ionic transport numbers have been measured of barium and calcium alumina...
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, ...
Aluminium(III) tartrate was synthesized by simple solution crystallization and its humidity de...
Three types of lithium nickel cobalt oxides doped with aluminium have been synthesised by a solid st...
Apresentação em posterAl2O3 is an insulator material, with high electrical breakdown and large band ...
Nous présentons des mesures d'une haute précision, de la partie ρ(T) dépendante de la température de...
In this thesis, phonon transport properties in single crystal and ceramic aluminium nitride (AIN) ha...
International audienceDirect current magnetron sputtering was used to produce AlNxOy thin films, usi...
The electrical conductivity of reduced ~-Nh~O ~ was measured after prior reduction in 10- " arm...
A discussion of electrical properties of amorphous thin films of Al−In2O3−Al structure is presented....
Tris(8-hydroxyquinoline) aluminium (Alq3) inserted in the structure ITO/Alq3/Al is used to show how...
AC-conductivity measurements were performed on aluminium oxynitrides (Alons) because of their intere...
Electrical conductivities of aluminum nitride (AlN) doped with various ions of different sizes and v...
The total electrical conductivity of oxygen-doped and beryllium-doped aluminum nitride has been meas...
The electrical conductivity of hot-pressed polycrystalline aluminium nitride doped with oxygen and b...
Electrical conductivity and ionic transport numbers have been measured of barium and calcium alumina...
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, ...
Aluminium(III) tartrate was synthesized by simple solution crystallization and its humidity de...
Three types of lithium nickel cobalt oxides doped with aluminium have been synthesised by a solid st...
Apresentação em posterAl2O3 is an insulator material, with high electrical breakdown and large band ...
Nous présentons des mesures d'une haute précision, de la partie ρ(T) dépendante de la température de...
In this thesis, phonon transport properties in single crystal and ceramic aluminium nitride (AIN) ha...
International audienceDirect current magnetron sputtering was used to produce AlNxOy thin films, usi...
The electrical conductivity of reduced ~-Nh~O ~ was measured after prior reduction in 10- " arm...
A discussion of electrical properties of amorphous thin films of Al−In2O3−Al structure is presented....
Tris(8-hydroxyquinoline) aluminium (Alq3) inserted in the structure ITO/Alq3/Al is used to show how...