Thin films of InSb nanocrystals have been deposited onto KCl substrate Using a thermal evaporation technique Under high vacuum conditions (similar to 10(-6) torr). Ail intriguing microstructure consisted of moire fringes with variable spacings and a corresponding variety of electron diffraction patterns in reciprocal space are reported at the deposition temperature of 373 K. The nano-rains of InSb with preferred orientation and faceted morphology are delineated. A possible mechanism has been postulated to explain the evolution of such microstructures. It has been noticed that there is a peculiarity in the resistivity characteristics and infrared transmittance measurements obtained oil these films. A set of electron micrographs, diffraction ...
Abstract: Far-infrared reflectance spectroscopy has been used to study the lattice vibrations of a s...
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected ...
610-614 The indium-antimonide having small band gap is an important material for IR detector...
339-346Thin films of InSb nanocrystals have been deposited onto KCl substrate using a thermal evapo...
55-63Technologically important Indium Antimonide (InSb) thin films have been grown on different subs...
Thin films of InSb are important for modern electronic applications. When these films are prepared b...
557-561The n-type indium antimonide thin films of the thickness 900 nm have been fabricated by elect...
The n-type indium antimonide thin films of the thickness 900 nm have been fabricated by electron be...
This report intends to present the research results obtained by the author in Final Year Project No....
Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at substrate tempe...
We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferr...
339-346In present study, the n-type indium antimonide (InSb) thin films of thickness 300 nm were d...
Thin films of InSb with different thickness (t = 5, 10 and 15 kÅ) were deposited on to glass substr...
260-266The n-type indium antimonide thin films of the thickness 300-1200 nm were fabricated by ele...
InSb is a very special binary III-V semiconductor with important applications in infrared detectors,...
Abstract: Far-infrared reflectance spectroscopy has been used to study the lattice vibrations of a s...
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected ...
610-614 The indium-antimonide having small band gap is an important material for IR detector...
339-346Thin films of InSb nanocrystals have been deposited onto KCl substrate using a thermal evapo...
55-63Technologically important Indium Antimonide (InSb) thin films have been grown on different subs...
Thin films of InSb are important for modern electronic applications. When these films are prepared b...
557-561The n-type indium antimonide thin films of the thickness 900 nm have been fabricated by elect...
The n-type indium antimonide thin films of the thickness 900 nm have been fabricated by electron be...
This report intends to present the research results obtained by the author in Final Year Project No....
Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at substrate tempe...
We present an electrochemical route to prepare nanocrystalline InSb thin films that can be transferr...
339-346In present study, the n-type indium antimonide (InSb) thin films of thickness 300 nm were d...
Thin films of InSb with different thickness (t = 5, 10 and 15 kÅ) were deposited on to glass substr...
260-266The n-type indium antimonide thin films of the thickness 300-1200 nm were fabricated by ele...
InSb is a very special binary III-V semiconductor with important applications in infrared detectors,...
Abstract: Far-infrared reflectance spectroscopy has been used to study the lattice vibrations of a s...
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected ...
610-614 The indium-antimonide having small band gap is an important material for IR detector...