In situ annealing experiments on hydrogenated amorphous-Si thin films coated with a thin layer of Al were performed under a scanning electron microscope equipped with a heating stage and an energy dispersive spectroscope. A sequential change in microstructural features due to interfacial diffusion at the apex of the boundary between Al and amorphous Si has been delineated. Transmission electron microscopy studies affirmed the evolution of polycrystalline Si as a result of the phase transition from amorphous to randomly oriented fine grained Si. A possible mechanism has been postulated to explore the metallurgical aspects of crystallization phenomena that persists during phase transformation
113 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Surface diffusion on amorphou...
International audienceAl-0.5%Cu-1%Si thin films deposited onto oxidized Si substrates were subjected...
The formation and development of Mo-Si interfaces in Mo/Si multilayers upon thermal annealing, inclu...
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystalliza...
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystalliza...
The investigation of polycrystalline silicon made on glass and carbon coated nickel substrates by al...
AbstractWith the rapid development photovoltaic industry, crystallization techniques play an importa...
The effect of an amorphous to nanocrystalline phase transition on the diffusion across an interface ...
Crystallisation of seed layers on inexpensive foreign substrates and their subsequent epitaxial thi...
During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality...
Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process ...
The kinetics of Al induced crystallization of amorphous silicon a Si are studied by variation of ...
Thin amorphous ({alpha}) films of silicon created by ion-implantation have been studied in-situ whil...
Low-temperature (400–540 °C) crystallization of amorphous and polycrystalline Si films deposited on ...
The effect of an amorphous-to-nanocrystalline phase transition on the diffusion across an interface ...
113 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Surface diffusion on amorphou...
International audienceAl-0.5%Cu-1%Si thin films deposited onto oxidized Si substrates were subjected...
The formation and development of Mo-Si interfaces in Mo/Si multilayers upon thermal annealing, inclu...
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystalliza...
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystalliza...
The investigation of polycrystalline silicon made on glass and carbon coated nickel substrates by al...
AbstractWith the rapid development photovoltaic industry, crystallization techniques play an importa...
The effect of an amorphous to nanocrystalline phase transition on the diffusion across an interface ...
Crystallisation of seed layers on inexpensive foreign substrates and their subsequent epitaxial thi...
During metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) the size and quality...
Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process ...
The kinetics of Al induced crystallization of amorphous silicon a Si are studied by variation of ...
Thin amorphous ({alpha}) films of silicon created by ion-implantation have been studied in-situ whil...
Low-temperature (400–540 °C) crystallization of amorphous and polycrystalline Si films deposited on ...
The effect of an amorphous-to-nanocrystalline phase transition on the diffusion across an interface ...
113 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.Surface diffusion on amorphou...
International audienceAl-0.5%Cu-1%Si thin films deposited onto oxidized Si substrates were subjected...
The formation and development of Mo-Si interfaces in Mo/Si multilayers upon thermal annealing, inclu...