We report positron-lifetime measurements in void-containing aluminum samples, which show strong temperature dependence for the positron trapping probability. A theory is presented for the positron motion and trapping in a three-dimensional array of large voids, which compares favorably with the experimental data. It is shown that at low temperatures the trapping is transition limited and strongly temperature dependent with a crossover to diffusion-limited and weakly-temperature-dependent behavior at high temperatures.Peer reviewe
Positron trapping into vacancies in semiconductors is studied on the basis of Fermis golden-rule cal...
Positron lifetime has been measured as a function of temperature in Si-doped GaAs single crystals su...
With the aim of extending positron-lifetime measurements to high temperature and avoiding surface an...
We report positron-lifetime measurements in void-containing aluminum samples, which show strong temp...
We report positron-lifetime measurements in void-containing aluminum samples, which show strong temp...
Temperature dependent effects, which may have a bearing on determinations of vacancy formation entha...
Variable energy positrons have been used to determine the dependence on temperature of positron diff...
A positron and electron can form the bound state called positronium. When positronium is formed in a...
A positron and electron can form the bound state called positronium. When positronium is formed in a...
Basing on a new approach to the calculations of the positron trapping rate, an attempt ',was made to...
The probability that positrons are trapped into the image-potential-induced state on a metal surface...
The probability that positrons are trapped into the image-potential-induced state on a metal surface...
On the basis of experimental positron lifetime spectra it was shown that positrons can be trapped at...
Positron trapping into vacancies in semiconductors is studied on the basis of Fermis golden-rule cal...
The Doppler broadened annihilation gamma ray line Shape (511-kev) resulting from the interaction of ...
Positron trapping into vacancies in semiconductors is studied on the basis of Fermis golden-rule cal...
Positron lifetime has been measured as a function of temperature in Si-doped GaAs single crystals su...
With the aim of extending positron-lifetime measurements to high temperature and avoiding surface an...
We report positron-lifetime measurements in void-containing aluminum samples, which show strong temp...
We report positron-lifetime measurements in void-containing aluminum samples, which show strong temp...
Temperature dependent effects, which may have a bearing on determinations of vacancy formation entha...
Variable energy positrons have been used to determine the dependence on temperature of positron diff...
A positron and electron can form the bound state called positronium. When positronium is formed in a...
A positron and electron can form the bound state called positronium. When positronium is formed in a...
Basing on a new approach to the calculations of the positron trapping rate, an attempt ',was made to...
The probability that positrons are trapped into the image-potential-induced state on a metal surface...
The probability that positrons are trapped into the image-potential-induced state on a metal surface...
On the basis of experimental positron lifetime spectra it was shown that positrons can be trapped at...
Positron trapping into vacancies in semiconductors is studied on the basis of Fermis golden-rule cal...
The Doppler broadened annihilation gamma ray line Shape (511-kev) resulting from the interaction of ...
Positron trapping into vacancies in semiconductors is studied on the basis of Fermis golden-rule cal...
Positron lifetime has been measured as a function of temperature in Si-doped GaAs single crystals su...
With the aim of extending positron-lifetime measurements to high temperature and avoiding surface an...