Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2
- Korhonen, Esa
- Kuitunen, K.
- Tuomisto, F.
- Urbaniak, A.
- Igalson, M.
- Larsen, J.
- Gütay, L.
- Siebentritt, S.
Publication date
August 2012
DOI Publisher
American Physical Society (APS) Journal
Physical Review BAbstract
Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.Peer reviewe
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