We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs heterostructures by means of split gates. We demonstrate a nonlinear dependence of the splitting on magnetic field and its substantial variations from dot to dot and from heterostructure to heterostructure. These phenomena are important in the context of information processing since the tunability and dot-dependence of the Zeeman splitting allow for a selective manipulation of spins. We show that spin-orbit effects related to the GaAs band structure quantitatively explain the observed magnitude of the nonlinear dependence of the Zeeman splitting. Furthermore, spin-orbit effects result in a dependence of the Zeeman splitting on predominantly the out-of-plan...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
The response of semiconductor materials to external magnetic fields is a reliable approach to probe ...
The Zeeman splitting of the ground and the first excited level of a Gaussian GaAs quantum dot is stu...
In this thesis, we report a new architecture for making lateral hole quantum dots based on shallow a...
Non-linear Zeeman splitting of neutral excitons is observed in composition engineerd InxGa1-xAS self...
Non-linear Zeeman splitting of neutral excitons is observed in composition engineerd InxGa1-xAS self...
Non-linear Zeeman splitting of neutral excitons is observed in composition engineerd InxGa1-xAS self...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad a...
We investigate modulation-doped GaAs-AlGaAs quantum wells by photoluminescence spectroscopy. Externa...
The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effecti...
We investigate modulation-doped GaAs-AlGaAs quantum wells by photoluminescence spectroscopy. Externa...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-el...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
The response of semiconductor materials to external magnetic fields is a reliable approach to probe ...
The Zeeman splitting of the ground and the first excited level of a Gaussian GaAs quantum dot is stu...
In this thesis, we report a new architecture for making lateral hole quantum dots based on shallow a...
Non-linear Zeeman splitting of neutral excitons is observed in composition engineerd InxGa1-xAS self...
Non-linear Zeeman splitting of neutral excitons is observed in composition engineerd InxGa1-xAS self...
Non-linear Zeeman splitting of neutral excitons is observed in composition engineerd InxGa1-xAS self...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad a...
We investigate modulation-doped GaAs-AlGaAs quantum wells by photoluminescence spectroscopy. Externa...
The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effecti...
We investigate modulation-doped GaAs-AlGaAs quantum wells by photoluminescence spectroscopy. Externa...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
We experimentally determine isotropic and anisotropic g-factor corrections in lateral GaAs single-el...
An unprecedentedly well resolved Zeeman effect has been observed when confined carriers moving along...
The response of semiconductor materials to external magnetic fields is a reliable approach to probe ...
The Zeeman splitting of the ground and the first excited level of a Gaussian GaAs quantum dot is stu...