This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and provide examples of emerging devices and architectures that may be implemented within the next 10-20 yr. We summarize multiple active areas of research to explain how future thin film deposition, etch, and patterning technologies can enable 3D (vertical) power, performance, area, and cost scaling. Emerging and new process technologies will be required to enable improved contacts, scaled and future devices and interconnects, monolithic 3D integration, and new computing architectures. These process...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
OVERVIEW: In the 0.1-µm age, it will be possible to build more than one billion transistors on a sil...
Abstract — Product innovation has for a long time been directly correlated to scaling as the enabler...
The number of transistors in integrated circuits is exponentially increasing over time, as predicted...
Device scaling for higher performance and lower power consumption requires the introduction of advan...
The international technology roadmap of semiconductors (ITRS) is approaching the historical end poin...
The international technology roadmap of semiconductors (ITRS) is approaching the historical end poin...
In the last years strong efforts were made to miniaturize microelectronic systems. Chip scale packag...
Semiconductor industry is one of the most dynamical industries in which ups and downs of the busines...
117 p.Increased use of technology in day to day life for seamless activity and increased living comf...
OVERVIEW: Semiconductor manufacturers ’ particular emphasis is on providing LSI (large-scale integra...
The structures of ULSI-circuits are continuously shrinking while the ship area has to increase in or...
According to the international technology roadmap for semiconductors (ITRS), 32 nm technology node w...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
OVERVIEW: In the 0.1-µm age, it will be possible to build more than one billion transistors on a sil...
Abstract — Product innovation has for a long time been directly correlated to scaling as the enabler...
The number of transistors in integrated circuits is exponentially increasing over time, as predicted...
Device scaling for higher performance and lower power consumption requires the introduction of advan...
The international technology roadmap of semiconductors (ITRS) is approaching the historical end poin...
The international technology roadmap of semiconductors (ITRS) is approaching the historical end poin...
In the last years strong efforts were made to miniaturize microelectronic systems. Chip scale packag...
Semiconductor industry is one of the most dynamical industries in which ups and downs of the busines...
117 p.Increased use of technology in day to day life for seamless activity and increased living comf...
OVERVIEW: Semiconductor manufacturers ’ particular emphasis is on providing LSI (large-scale integra...
The structures of ULSI-circuits are continuously shrinking while the ship area has to increase in or...
According to the international technology roadmap for semiconductors (ITRS), 32 nm technology node w...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...
International audienceWe report on vertically stacked nanosheet (NS) FET devices as the most promisi...