Add to ORKGCoordinated Science Laboratory was formerly known as Control Systems LaboratoryJoint Services Electronics Program / DAAB-07-72-C-0259Ope
International audienceGaAs(001) substrates nitrided with N 2 plasma at various temperatures were inv...
Cataloged from PDF version of article.In this work, the effects of N incorporation on the optical pr...
Journal ArticleWe demonstrate that pulsed laser annealing followed by rapid thermal annealing greatl...
Coordinated Science Laboratory was formerly known as Control Systems LaboratoryJoint Services Electr...
Recently, the addition of nitrogen into GaAs-based components has attracted considerable attention d...
The authors report on the fabrication and characterization of photodetectors based on nitrogen-ion-i...
[[abstract]]Photoluminescence studies were performed to evaluate the results of rapid thermal anneal...
171 p.A small amount of nitrogen incorporated into III-V semiconductor alloys leads to a band gap en...
peer reviewedThe authors report on the fabrication and characterization of photodetectors based on n...
The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean GaAs(001) surf...
We have examined the origins of luminescence in N-ion-implanted epitaxial GaAsGaAs, using a combinat...
We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We use...
Coordinated Science Laboratory was formerly known as Control Systems LaboratoryJoint Services Electr...
We present new insights into the problem of the isoelectronic nitrogen (N) impurity in gallium arsen...
International audienceGaAs(001) substrates nitrided with N 2 plasma at various temperatures were inv...
Cataloged from PDF version of article.In this work, the effects of N incorporation on the optical pr...
Journal ArticleWe demonstrate that pulsed laser annealing followed by rapid thermal annealing greatl...
Coordinated Science Laboratory was formerly known as Control Systems LaboratoryJoint Services Electr...
Recently, the addition of nitrogen into GaAs-based components has attracted considerable attention d...
The authors report on the fabrication and characterization of photodetectors based on nitrogen-ion-i...
[[abstract]]Photoluminescence studies were performed to evaluate the results of rapid thermal anneal...
171 p.A small amount of nitrogen incorporated into III-V semiconductor alloys leads to a band gap en...
peer reviewedThe authors report on the fabrication and characterization of photodetectors based on n...
The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean GaAs(001) surf...
We have examined the origins of luminescence in N-ion-implanted epitaxial GaAsGaAs, using a combinat...
We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We use...
Coordinated Science Laboratory was formerly known as Control Systems LaboratoryJoint Services Electr...
We present new insights into the problem of the isoelectronic nitrogen (N) impurity in gallium arsen...
International audienceGaAs(001) substrates nitrided with N 2 plasma at various temperatures were inv...
Cataloged from PDF version of article.In this work, the effects of N incorporation on the optical pr...
Journal ArticleWe demonstrate that pulsed laser annealing followed by rapid thermal annealing greatl...