Thesis (B.S.) in Chemical Engineering -- University of Illinois at Urbana-Champaign, 1988.Bibliography: leaf 33.Microfiche of typescript. [Urbana, Ill.]: Photographic Services, University of Illinois, U of I Library, [1988]. 2 microfiches (52 frames): negative
High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “thr...
This paper presents results on the deposition of Si1-xGex layers in a hot wall low pressure chemical...
The growth of germanium at low temperature by ultrahigh vacuum chemical vapor deposition on Si(001) ...
Thesis (B.S.) in Chemical Engineering -- University of Illinois at Urbana-Champaign, 1988.Bibliograp...
Thesis (B.S.) in Chemical Engineering -- University of Illinois at Urbana-Champaign, 1987.Bibliograp...
A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy depo...
This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution...
A study of low-pressure chemical vapor deposition (LPCVD) of GexSi1-��x (x<0.65) films was carried o...
Thesis (B.S.) in Chemistry--University of Illinois at Urbana-Champaign, 1992.Includes bibliographica...
Dittmar K, Jutzi P, Schmalhorst J-M, Reiss G. Cyclopentadienyl germanes as novel precursors for the ...
Thin films of polycrystalline germanium were formed by the pyrolysis of germane gas in a low-pressur...
In this work, digermane (Ge2H6) is investigated as low temperature Ge precursor for Chemical Vapor D...
Abstract. The purpose of this article is to present, for the chemical vapour deposition process, mas...
A study of low-pressure chemical vapor deposition LPCVD of GexSi1−x x 0.65 films was carried out. Th...
This letter reports on the Ge segregation mechanism occurring during ultrathin (few monolayers) Si c...
High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “thr...
This paper presents results on the deposition of Si1-xGex layers in a hot wall low pressure chemical...
The growth of germanium at low temperature by ultrahigh vacuum chemical vapor deposition on Si(001) ...
Thesis (B.S.) in Chemical Engineering -- University of Illinois at Urbana-Champaign, 1988.Bibliograp...
Thesis (B.S.) in Chemical Engineering -- University of Illinois at Urbana-Champaign, 1987.Bibliograp...
A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy depo...
This item was digitized from a paper original and/or a microfilm copy. If you need higher-resolution...
A study of low-pressure chemical vapor deposition (LPCVD) of GexSi1-��x (x<0.65) films was carried o...
Thesis (B.S.) in Chemistry--University of Illinois at Urbana-Champaign, 1992.Includes bibliographica...
Dittmar K, Jutzi P, Schmalhorst J-M, Reiss G. Cyclopentadienyl germanes as novel precursors for the ...
Thin films of polycrystalline germanium were formed by the pyrolysis of germane gas in a low-pressur...
In this work, digermane (Ge2H6) is investigated as low temperature Ge precursor for Chemical Vapor D...
Abstract. The purpose of this article is to present, for the chemical vapour deposition process, mas...
A study of low-pressure chemical vapor deposition LPCVD of GexSi1−x x 0.65 films was carried out. Th...
This letter reports on the Ge segregation mechanism occurring during ultrathin (few monolayers) Si c...
High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate using a “thr...
This paper presents results on the deposition of Si1-xGex layers in a hot wall low pressure chemical...
The growth of germanium at low temperature by ultrahigh vacuum chemical vapor deposition on Si(001) ...
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