Characterization of a Keggin Polyoxometalate on Metal and Semiconductor Surfaces

204 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.Finally, studies of alpha-[SiW12O40]4- on Si surfaces are undertaken. In the first route, the Si surface is derivatized with a multicationic layer and alpha-[SiW12O 40]4- is assembled on this layer via electrostatic attraction. Characterization of this layer indicates that there is a substantial amount of alpha-[SiW12O40]4- present on the surface and that the molecule is intact. In the second route, the Si surface is etched and then reacted with alpha-[SiW12O 40]4-, with the goal being covalent attachment of alpha-[SiW12O40]4- directly to the Si surface. Utilizing a specific deposition scheme, the results show that alpha-[SiW12O40]4- is likely present on the surface as a very thin layer.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD