155 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.Surface reactions occurring in fluorocarbon plasmas also influence plasma properties by consuming or generating plasma fluxes. Of particular interest is the effect that surfaces have on CF2 densities, as CF2 is a precursor for polymer formation. These processes were investigated with the integrated plasma-surface model. Simulations demonstrated that CF 2 self-sticking is a loss at the surface, while ion sputtering and large ion dissociation can generate CF2 at surfaces. The net effect of the surface depends on the relative magnitudes of the loss and generation reactions.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycl...
Plasma etching is an essential process in the fabrication of subm cron features in the semiconductor...
In the etching of SiO2 in fluorocarbon plasmas, both etching and deposition occur simultaneously, an...
Plasma etching, the selective removal of materials by reaction with chemically active species formed...
Photolithographic patterning of photoresist materials and transfer of these images into electronic m...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.Cleaning of residual polymer ...
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
This report provides a summary of results obtained in research supported by contract ''Fundamental S...
190 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.The nature of transport and r...
As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that d...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1995.Includes...
Among various surface modification techniques, plasma can be used as a source for tailoring the surf...
Abstract- Etching and modification of polymers by plasmas is discussed in terms of the roles played ...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycl...
Plasma etching is an essential process in the fabrication of subm cron features in the semiconductor...
In the etching of SiO2 in fluorocarbon plasmas, both etching and deposition occur simultaneously, an...
Plasma etching, the selective removal of materials by reaction with chemically active species formed...
Photolithographic patterning of photoresist materials and transfer of these images into electronic m...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.Cleaning of residual polymer ...
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
This report provides a summary of results obtained in research supported by contract ''Fundamental S...
190 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.The nature of transport and r...
As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that d...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1995.Includes...
Among various surface modification techniques, plasma can be used as a source for tailoring the surf...
Abstract- Etching and modification of polymers by plasmas is discussed in terms of the roles played ...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
The kinetics and mechanism of the title processes are discussed on the basis of a model in which the...
Surface phenomena during atomic layer etching (ALE) of SiO2 were studied during sequential half-cycl...