Chemical Vapor Deposition of Metal Diboride and Metal Oxide Thin Films From Borohydride-Bonded Precursors

249 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.The high Tc superconductor MgB2 were deposited at low temperatures (T = 300°C--400°C) from a recently developed highly volatile borohydride-bonded Mg precursor, by means of catalyst-enhanced chemical vapor deposition. The films are stoichiometric and highly crystallized, however, the lattice constants shift away from the MgB2 structure to the diboride structure of the catalyst metal, suggesting that Mg is partially substituted by the corresponding metals.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD