122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.The future of self-assembled nanostructures lies in the selective placement of individual nanostructures for applications such as integrated optoelectronics, quantum computing and quantum encryption. By utilizing InGaAs thin films, a method of selective area epitaxy has been developed. Not only is the technique better suited for self-assembled nanostructure growth and processing, but single island growth with resolutions on the order of 100 nanometers have been achieved.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
Different growth techniques and growth strategies are presented to climb up the hierarchy of order ...
assembly guided by the underlying chemically modified former pattern [15]. Large area–patterned nano...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.The future of self-assembled ...
123 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.Self-assembled quantum dots h...
International audienceA new method for obtaining InGaAs nanodomains on the surface of GaAs or (Al,Ga...
The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorga...
Site and size control of ordered arrays of semiconductor nanostructures in an efficient way has rema...
We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs ...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.In light of the substantial p...
Low dimensional structures (LDS) form a major new branch of physics research. They are semiconductor...
There is increasing interest in Si-based optoelectronics using Si1 - xGex nanostructures due to the ...
We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, ...
InGaAs nanowires grown by Metalorganic Vapor Phase Epitaxy (MOVPE) are promising candidates in futur...
The selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase ...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
Different growth techniques and growth strategies are presented to climb up the hierarchy of order ...
assembly guided by the underlying chemically modified former pattern [15]. Large area–patterned nano...
122 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.The future of self-assembled ...
123 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.Self-assembled quantum dots h...
International audienceA new method for obtaining InGaAs nanodomains on the surface of GaAs or (Al,Ga...
The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorga...
Site and size control of ordered arrays of semiconductor nanostructures in an efficient way has rema...
We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs ...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.In light of the substantial p...
Low dimensional structures (LDS) form a major new branch of physics research. They are semiconductor...
There is increasing interest in Si-based optoelectronics using Si1 - xGex nanostructures due to the ...
We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, ...
InGaAs nanowires grown by Metalorganic Vapor Phase Epitaxy (MOVPE) are promising candidates in futur...
The selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase ...
The unique self-organizing growth mechanisms on planar and patterned high-index substrates leading t...
Different growth techniques and growth strategies are presented to climb up the hierarchy of order ...
assembly guided by the underlying chemically modified former pattern [15]. Large area–patterned nano...