Add to ORKG73 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.Molecular Dynamic simulation of low-energy noble gas atoms impacting semiconductor surfaces revealed a new, unexpectedly strong tradeoff between the energy threshold for point defect formation and substrate temperature. Experimental measurements of Ge and In surface diffusion on Si(111) by optical second harmonic microscopy (SHM) confirmed major aspects of the predicted temperature amplification. The work may offer a new means for selecting specific rate processes in application such as plasma processing or ion beam assist deposition.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
193 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.There has long been suspicion...
193 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.There has long been suspicion...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...
73 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.Molecular Dynamic simulation o...
418 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.For surface diffusion, second...
418 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.For surface diffusion, second...
Surface diffusion is of fundamental importance in a variety of industrial kinetic processes, includi...
Surface diffusion is of fundamental importance in a variety of industrial kinetic processes, includi...
The low temperature and flux dependent growth of ultrathin Ag films on the Si(111)7x7 surface is stu...
202 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.Surface diffusion of Sb on Ge...
Thesis (B.S.)--University of Illinois at Urbana-Champaign, 1998.Includes bibliographical reference (...
The primary thrust of this dissertation is the investigation of the composition and structure of two...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...
Electron beam dopings are impurity doping processes that impurity sheets are overlaid on the substra...
Electron beam dopings are impurity doping processes that impurity sheets are overlaid on the substra...
193 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.There has long been suspicion...
193 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.There has long been suspicion...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...
73 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.Molecular Dynamic simulation o...
418 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.For surface diffusion, second...
418 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.For surface diffusion, second...
Surface diffusion is of fundamental importance in a variety of industrial kinetic processes, includi...
Surface diffusion is of fundamental importance in a variety of industrial kinetic processes, includi...
The low temperature and flux dependent growth of ultrathin Ag films on the Si(111)7x7 surface is stu...
202 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992.Surface diffusion of Sb on Ge...
Thesis (B.S.)--University of Illinois at Urbana-Champaign, 1998.Includes bibliographical reference (...
The primary thrust of this dissertation is the investigation of the composition and structure of two...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...
Electron beam dopings are impurity doping processes that impurity sheets are overlaid on the substra...
Electron beam dopings are impurity doping processes that impurity sheets are overlaid on the substra...
193 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.There has long been suspicion...
193 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.There has long been suspicion...
The electronic properties of semiconductor surfaces change readily upon changing the carrier densiti...