Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar

126 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.This dissertation summarizes the design and performance of a set of MMICs fabricated at the University of Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive components. All of the models are verified with comparisons to measured data through W-band. This work then presents measured and simulated performance characteristics of the MMICs. A three-stage amplifier exhibits 8 dB of gain, and each diode and FET-based mixer exhibits less than 15 dB of conversion loss at 77 GHz. These results demonstrate the potential of ion-implanted MESFET technology at millimeter-wave frequencies.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD