Characterization of VCSELs for Circuit Simulation

113 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.This thesis considers the characterization of laser diodes for circuit simulation. Vertical cavity surface emitting lasers (VCSELs) modeled by rate equations are emphasized. Measurements are used to determine the parameters of two specific rate equation models. The first model includes the nonlinear gain and carrier recombination characteristics. Rate equation parameters are extracted from static current-light-voltage (I-L-V), time domain turn-on delay, and ac reflection and transmission measurements. The parameters are demonstrated to be suitable for modeling operation with low prebias currents. The second model includes, in addition to the features of the first model, temperature-dependent properties of the VCSEL, including the temperature-dependent gain, leakage current, and input impedance characteristics. Rate equation parameters are extracted from measurements of the static I-L-V at various temperatures, the ac reflection below threshold, and the ac transmission above threshold. The utility of laser diode rate equation models is shown by the demonstration of a pre-equalization transmitter circuit designed using these models.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD