91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.Reliability simulation of a 51-stage ring-oscillator was performed. The circuit lifetime improvement due to D2 anneal can be well estimated by the device dc lifetime improvement data.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
The importance of long term reliability in MOS VLSI circuits is becoming an important subject becaus...
In this paper, hot carrier degradation is shortly explained, measurements are shown for degradation ...
Les travaux de cette thèse portent sur la simulation de la dégradation des paramètres électriques de...
In this thesis a computer-aided design system for CMOS VLSI circuit hot-carrier reliability estimati...
As VLSI technologies scale to deep submicron region, the DC device-based hot-carrier criterion is no...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
CMOS hot-carrier reliability at both transistor and circuit levels has been examined. Accurate relia...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Abstract—This paper focuses on hot carrier (HC) effects in modern CMOS technologies and proposes a s...
International audienceReliability simulation is an area of increasing interest as it allows the desi...
International audienceReliability simulation is an area of increasing interest as it allows the desi...
International audienceReliability simulation is an area of increasing interest as it allows the desi...
International audienceReliability simulation is an area of increasing interest as it allows the desi...
The goals of the research work presented in this thesis are to model submicron pMOS transistor hot-c...
Circuit aging simulation is seen as a true enhancement to device and circuit simulation. To predict ...
The importance of long term reliability in MOS VLSI circuits is becoming an important subject becaus...
In this paper, hot carrier degradation is shortly explained, measurements are shown for degradation ...
Les travaux de cette thèse portent sur la simulation de la dégradation des paramètres électriques de...
In this thesis a computer-aided design system for CMOS VLSI circuit hot-carrier reliability estimati...
As VLSI technologies scale to deep submicron region, the DC device-based hot-carrier criterion is no...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
CMOS hot-carrier reliability at both transistor and circuit levels has been examined. Accurate relia...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Abstract—This paper focuses on hot carrier (HC) effects in modern CMOS technologies and proposes a s...
International audienceReliability simulation is an area of increasing interest as it allows the desi...
International audienceReliability simulation is an area of increasing interest as it allows the desi...
International audienceReliability simulation is an area of increasing interest as it allows the desi...
International audienceReliability simulation is an area of increasing interest as it allows the desi...
The goals of the research work presented in this thesis are to model submicron pMOS transistor hot-c...
Circuit aging simulation is seen as a true enhancement to device and circuit simulation. To predict ...
The importance of long term reliability in MOS VLSI circuits is becoming an important subject becaus...
In this paper, hot carrier degradation is shortly explained, measurements are shown for degradation ...
Les travaux de cette thèse portent sur la simulation de la dégradation des paramètres électriques de...