InP/InGaAs Heterojunction Bipolar Transistors and Field-Effect Transistors Grown by Gas -Source Molecular Beam Epitaxy

95 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.Finally, the thermal degradation of heavily C-doped InGaAs and its effects on dc properties of InGaAs/InP HBTs have been studied. The degradation of the junction properties and current gain-base sheet resistance ratio can be attributed to the formation of C precipitates. These findings are important for improving the reliability of C-doped InP/InGaAs HBTs. (Abstract shortened by UMI.).U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD