Circuit-Level Modeling and Simulation of Semiconductor Lasers

251 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.We then present circuit-level models for vertical-cavity surface-emitting lasers (VCSELs) and their strong thermally and spatially dependent behavior. The first approach, implemented in both HSPICE and SABER, is a simple thermal model which incorporates a temperature-dependent offset current into the standard laser rate equations in order to describe thermally dependent threshold current and output-power rollover in the LI characteristics. The second model is a comprehensive circuit level model in SABER which uses analytical temperature dependencies and spatially independent rate equations to describe a VCSEI's thermal and spatial behavior. In addition to simulating thermal LI characteristics, this latter model can also be used to simulate multimode competition, temperature-dependent modulation responses, and diffusive transients in the time domain. After presenting the theory and implementation of our VCSEL models, we compare simulated and experimental data for various devices reported in the literature. Despite some important modeling and characterization issues, the data compare favorably.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD