85 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.Thermal annealing techniques were also applied to QWRs. After this treatment, emissions were found to be at a higher energy than the as-grown samples, attributed to the disordering of the lateral composition modulation which, in effect, raised the bandgap energy of the QWR material. In addition, annealing was also found to reduce the magnitude but maintain the direction of a red-shift in emission wavelength with cooling measurement temperature. This thermal treatment served to be a useful tool in engineering the emission wavelength from a QWR sample from 1.6 to 1.55 mm.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid t...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.Midinfrared (6.3 and 8.4 mum)...
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) str...
85 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.Thermal annealing techniques w...
In light of the substantial performance advantages of quantum well lasers relative to double heteros...
[[abstract]]The strain-induced lateral-layer ordering process is used to fabricate GaInAs quantum wi...
We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-d...
The material and device characterization of furnace and rapid thermally annealed (RTA) GaAs/AlGaAs m...
The luminescence characteristics of an AlGaInP double heterostructure, InGaP quantum well (QW), and ...
117 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.Using the Hakki-Paoli method,...
In this work we have studied the dependence of the optical properties of self-assembled InAs quantum...
We report a 5 nm thick V-shaped AlGaAs/GaAs single quantum wire (QWR) that showed high photoluminesc...
Selective area growth on silicon dioxide masked gallium arsenide substrates by chemical beam epitaxy...
International audienceStructures with In(Ga)As quantum dots in the GaAs matrix obtained using molecu...
Asymmetric double GaAs/AlGaAs V-grooved quantum wires, grown by low pressure metalorganic chemical v...
Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid t...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.Midinfrared (6.3 and 8.4 mum)...
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) str...
85 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.Thermal annealing techniques w...
In light of the substantial performance advantages of quantum well lasers relative to double heteros...
[[abstract]]The strain-induced lateral-layer ordering process is used to fabricate GaInAs quantum wi...
We report the formation of GaAs quantum wires (QWRs) on (311)A substrates by droplet epitaxy. High-d...
The material and device characterization of furnace and rapid thermally annealed (RTA) GaAs/AlGaAs m...
The luminescence characteristics of an AlGaInP double heterostructure, InGaP quantum well (QW), and ...
117 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.Using the Hakki-Paoli method,...
In this work we have studied the dependence of the optical properties of self-assembled InAs quantum...
We report a 5 nm thick V-shaped AlGaAs/GaAs single quantum wire (QWR) that showed high photoluminesc...
Selective area growth on silicon dioxide masked gallium arsenide substrates by chemical beam epitaxy...
International audienceStructures with In(Ga)As quantum dots in the GaAs matrix obtained using molecu...
Asymmetric double GaAs/AlGaAs V-grooved quantum wires, grown by low pressure metalorganic chemical v...
Single Al0.5Ga0.5As/GaAs V-groove quantum wires (QWR) modified by selective implantation and rapid t...
101 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.Midinfrared (6.3 and 8.4 mum)...
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) str...