91 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.In this work, GaAsSb-based double heterojunction bipolar transistors (DHBTs) and light emitting transistors (LETs) are grown using gas source molecular beam epitaxy (GSMBE). High-speed GaAs0.5Sb0.5/InP DHBTs are developed through the exercise of GSMBE growth optimization, device fabrication, and characterization. By adjusting the growth temperature and V/III flux ratio, the optimal conditions for growing GaAs0.5Sb0.5 base are found to be at high growth temperature and low V/III ratio. The switching sequence is also optimized so that the Sb segregation effect is minimized. By using GaAs0.5Sb0.5-In0.2Ga0.8As 0.7Sb0.3 compositional grading in the base of the GaAsSb/InP DHBT,...
A InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) structure has been defined, realize...
Jury: M. Y. Guldner, M. A. Marty, M. S. Delage, M. P. Bove, M. JL. PelouardThis thesis is one of the...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
[[abstract]]High quality GaAsSb/InP double heterojunction bipolar transistor (DHBT) structures were ...
[[abstract]]High-quality GaAsSb epitaxial layers lattice-matched to InP are required to construct ul...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...
For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds ...
The In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs materials system has been investigated for use in heterojunction...
Gallium-arsenide-antimonide-based indium phosphide double heterojunction bipolar transistors (InP/Ga...
Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequenc...
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carr...
The heterojunction bipolar transistor (HBT) is a device whose time has come. The high gains, lineari...
The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar ...
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar tr...
In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated...
A InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) structure has been defined, realize...
Jury: M. Y. Guldner, M. A. Marty, M. S. Delage, M. P. Bove, M. JL. PelouardThis thesis is one of the...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
[[abstract]]High quality GaAsSb/InP double heterojunction bipolar transistor (DHBT) structures were ...
[[abstract]]High-quality GaAsSb epitaxial layers lattice-matched to InP are required to construct ul...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...
For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds ...
The In$\rm\sb{0.5}Ga\sb{0.5}$P/GaAs materials system has been investigated for use in heterojunction...
Gallium-arsenide-antimonide-based indium phosphide double heterojunction bipolar transistors (InP/Ga...
Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequenc...
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carr...
The heterojunction bipolar transistor (HBT) is a device whose time has come. The high gains, lineari...
The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar ...
Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar tr...
In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated...
A InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) structure has been defined, realize...
Jury: M. Y. Guldner, M. A. Marty, M. S. Delage, M. P. Bove, M. JL. PelouardThis thesis is one of the...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...