Add to ORKG57 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.This dissertation focuses on developing a distributed field-effect transistor (FET) small-signal model that is accurate from do to 110 GHz for a wide range of bias conditions. The distributed model is intended to be compatible with a large-signal implementation. The distributed model performance is compared with that of a standard lumped-element model. Skin effect in the gate conductor is analyzed. High-frequency measurement issues are also discussed.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD
This research effort advances millimeter-wave transistor modeling in a current RF/Microwave circuit ...
A Design-Oriented FET model in conjunction with an appropriate design procedure for distributed ampl...
Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwa...
A distributed modelling approach for micro- and millimetre-wave FETs is presented. Model identificat...
Electron device modeling is a challenging task at millimeter-wave frequencies. In particular, conven...
Electron device modeling is a challenging task at millimeter frequencies. Conventional approaches ba...
The paper presents a new approach to the distributed modeling of high frequency transistors suitable...
The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an ever...
An empirical distributed model, based on electromagnetic analysis and standard S-parameter measureme...
Current monolithic-microwave integrated-circuit design, involving frequencies far in the millimeter ...
"Dissertation submitted in fulfilment of the requirements for the degree of Doctor of Philosophy""No...
A distributed CAD-oriented model for micro- and millimetre-wave FETs is presented along with a new s...
In this paper we utilize a new approach for a small signal model which is scalable from very small t...
A general technique for predicting the MODFET large signal performance has been developed. The techn...
The small-signal parameters of gate-all-around tunneling field-effect transistors (GAA TFETs) with d...
This research effort advances millimeter-wave transistor modeling in a current RF/Microwave circuit ...
A Design-Oriented FET model in conjunction with an appropriate design procedure for distributed ampl...
Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwa...
A distributed modelling approach for micro- and millimetre-wave FETs is presented. Model identificat...
Electron device modeling is a challenging task at millimeter-wave frequencies. In particular, conven...
Electron device modeling is a challenging task at millimeter frequencies. Conventional approaches ba...
The paper presents a new approach to the distributed modeling of high frequency transistors suitable...
The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an ever...
An empirical distributed model, based on electromagnetic analysis and standard S-parameter measureme...
Current monolithic-microwave integrated-circuit design, involving frequencies far in the millimeter ...
"Dissertation submitted in fulfilment of the requirements for the degree of Doctor of Philosophy""No...
A distributed CAD-oriented model for micro- and millimetre-wave FETs is presented along with a new s...
In this paper we utilize a new approach for a small signal model which is scalable from very small t...
A general technique for predicting the MODFET large signal performance has been developed. The techn...
The small-signal parameters of gate-all-around tunneling field-effect transistors (GAA TFETs) with d...
This research effort advances millimeter-wave transistor modeling in a current RF/Microwave circuit ...
A Design-Oriented FET model in conjunction with an appropriate design procedure for distributed ampl...
Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwa...