Planar Tunneling Spectroscopy of Thin-Film Niobium, Niobium/normal Metal and Niobium/semicondutor Structures

89 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.The superconductor-semiconductor study was performed on Nb-InGaAs bilayers. The Schottky barrier formed at the interface between these two materials was utilized as a tunneling barrier. A method was developed to fabricate small area junctions. The tunneling conductance as a function of semiconductor properties and sample temperature have been found to be consistent with results reported in the literature.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD