Add to ORKGInternational audienceA low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation
In this PhD work, the threading dislocation glide characteristics in Ge epitaxial layers have been s...
The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attr...
While silicon represents the dominant material in the semiconductor industry, the continuous improve...
International audienceA low-cost method to reduce the threading disloca-tions density (TDD) in relax...
International audienceIn this presentation, we propose a new defect engineering strategy in highly m...
To further boost the CMOS device performance, Ge has been successfully integrated on shallow trench ...
To further boost the CMOS device performance, Ge has been successfully integrated on shallow trench ...
International audienceA low-cost method to reduce the threading dislocations density (TDD) in relaxe...
AbstractThe selective growth of germanium into nanoscale trenches on silicon substrates was ext. 766...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attr...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
Strain relaxed Si1−Ge buffer layers on Si(001) can be used as virtual substrates for the growth of b...
In this PhD work, the threading dislocation glide characteristics in Ge epitaxial layers have been s...
The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attr...
While silicon represents the dominant material in the semiconductor industry, the continuous improve...
International audienceA low-cost method to reduce the threading disloca-tions density (TDD) in relax...
International audienceIn this presentation, we propose a new defect engineering strategy in highly m...
To further boost the CMOS device performance, Ge has been successfully integrated on shallow trench ...
To further boost the CMOS device performance, Ge has been successfully integrated on shallow trench ...
International audienceA low-cost method to reduce the threading dislocations density (TDD) in relaxe...
AbstractThe selective growth of germanium into nanoscale trenches on silicon substrates was ext. 766...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attr...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
Strain relaxed Si1−Ge buffer layers on Si(001) can be used as virtual substrates for the growth of b...
In this PhD work, the threading dislocation glide characteristics in Ge epitaxial layers have been s...
The integration of germanium (Ge) into silicon-based microelectronics technologies is currently attr...
While silicon represents the dominant material in the semiconductor industry, the continuous improve...