Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using Tetrakis (dimethylamino) titanium precursor on in-situ oxidized Ru electrode

International audienceIn this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current